2SC3392 datasheet(1/1 Pages) KEXIN

No. de pieza	2SC3392

Descripción Electrónicos	NPN Epitaxial Planar Silicon Transistors

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

NPN Epitaxial Planar Silicon Transistors

2SC3392

Features

Adoption of FBET process.

High breakdown voltage : VCEO=50V.

Large current capacitiy and high fT.

Ultrasmall-sized package permitting sets

to be smallsized, slim.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5V

Collector current

IC

500

mA

Collector current (pulse)

ICP

800

mA

Collector dissipation

PC

200

mW

Jumction temperature

Tj

150

Storage temperature

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

IcBO

VCB =40V , IE =0

0.1

ìA

Emitter cutoff current

IEBO

VEB =4V , IC =0

0.1

ìA

DC current Gain

hFE

VCE =5V , IC = 10mA

100

560

Gain bandwidth product

fT

VCE =10V , IC = 50mA

300

MHz

Common base output capacitance

Cob

VCB = 10V , f = 1MHz

3.7

pF

Collector-to-emitter saturation voltage

VCE(sat) IC =100mA , IB =10mA

0.1

0.3

V

Base-to-emitter saturation voltage

VBE(sat) IC =100mA , IB =10mA

0.8

1.2

V

Collector-to-base breakdown voltage

V(BR)CBO IC =10ìA , IE =0

60

V

Collector-to-emitter breakdown voltage

V(BR)CEO IC =100ìA , RBE =

50

V

Emitter-to-base breakdown voltage

V(BR)EBO IE =10ìA , IC =0

5

V

Turn-on time

ton

70

ns

Storage time

tstg

VCC = 20V, IC =10IB1 =-10IB2 = 100mA

400

ns

Fall time

tf

70

ns

hFE Classification

Marking

Rank

4

5

6

7

hFE

100 200

140

280

200

400

280

560

AY

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2SC3392 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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