2SC1621 datasheet(1/2 Pages) KEXIN

No. de pieza	2SC1621

Descripción Electrónicos	NPN Silicon Epitaxial Transistor

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

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1

SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

NPN Silicon Epitaxial Transistor

2SC1621

Features

High speed : tstg=20ns MAX.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

40

V

Collector to emitter voltage

VCEO

20

V

Emitter to base voltage

VEBO

5V

Collector current (DC)

IC

200

mA

Total power dissipation

PT

200

mW

Junction temperature

Tj

150

Storage temperature range

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB =30V, IE=0

100

nA

Emitter cutoff current

IEBO

VEB =4V, IC=0

100

nA

DC current gain *

hFE

VCE =0.5V , IC = 1mA

40

80

180

Collector-emitter saturation voltage *

VCE(sat) IC =10mA , IB = 1mA

0.13

0.25

V

Base-emitter saturation voltage *

VBE(sat) IC =10mA , IB = 1mA

0.74

0.85

V

Gain bandwidth product

fT

VCE =10V , IE = -10mA

200

500

MHz

Output capacitance

Cob

VCB =10V , IE = 0 , f = 1.0MHz

3.0

6.0

pF

Turn-on time

ton

12

20

ns

Storage time

tstg

See Test Circuit

7

20

ns

Turn-off time

toff

18

40

ns

*. PW

350ìs,duty cycle

2%

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2SC1621 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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