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2SC4366 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza 2SC4366
Descripción Electrónicos  Silicon NPN Epitaxial
PDF  1 Pages
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC4366 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC4366 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Silicon NPN Epitaxial
2SC4366
Features
Low Frequency amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
300
mA
Collector dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE =0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC =1mA , RBE =
50
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC =0
15
V
Collector cutoff current
ICBO
VCB = 50V, IE=0
1
ìA
Base-emitter voltage
VBE
VCE =6V , IC = 1mA
0.75
V
DC current gain
hFE
VCE =6V , IC = 100mA
800
2000
Collector-emitter saturation voltage
VCE(sat) IC = 300mA , IB = 30mA
0.3
V
Marking
Marking
ZI-


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