4-22

TELCOM SEMICONDUCTOR, INC.

ABSOLUTE MAXIMUM RATINGS*

Plastic DIP ........................................................... 730mW

SOIC ...............................................................470mW

Storage Temperature Range ................ – 65

°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300

°C

PIN DESCRIPTION

Pin No.

8-Pin DIP/SOIC

Symbol Description

–

Input. Capacitor C1 negative

terminal.

+

Input. Capacitor C2 positive

terminal.

–

Input. Capacitor C2 negative

terminal

Output. Negative output voltage

5

GND

Input. Device ground.

Input. Power supply voltage.

+

Input. Capacitor C1 positive

terminal

8

N/C

No Connection

Figure 1. TC682 Test Circuit

V

GND

GND

C2

+

C2

–

RL

C1

+

C1

C2

C1

–

IN

VIN

VOUT

C

All Caps = 3.3

µF

OUT

TC682

(+5V)

VOUT

–

–

6

7

1

2

3

5

4

–

+

+

–

+

*This is a stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational sections of

the specifications is not implied. Exposure to Absolute Maximum Rating

Conditions for extended periods may affect device reliability.

unless otherwise indicated.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Supply Voltage Range

2.4

—

5.5

V

Supply Current

—

185

300

µA

—

—

400

—

140

180

Ω

Source Resistance

—

—

230

—

170

320

Oscillator Frequency

—

12

—

kHz

Power Efficiency

92

—

%

Voltage Conversion Efficiency

∞

99

99.9

—

%

TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums

and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use

of any circuits described herein and makes no representations that they are free from patent infringement.

INVERTING VOLTAGE DOUBLER

TC682