KSS138 datasheet(2/2 Pages) KEXIN

No. de pieza	KSS138

Descripción Electrónicos	Power MOSFET 200 mA, 50 V

PDF	2 Pages

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Página de inicio	http://www.kexin.com.cn/index.asp

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2 / 2 page

SMD Type

Transistors

Marking

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain-to-source breakdown voltage

V(BR)DSS VGS =0V, ID = 250 ìA

Zero gate voltage drain current

VDS =25V, VGS =0

0.1

ìA

VDS =50V, VGS =0

0.5

ìA

Gate-source leakage current

IGSS

VGS =

20 V, VDS =0

0.1

ìA

Gate-source threshold voltage *

VGS(th)

VDS =VGS,ID = 1.0 mA

0.5

1.5

Static drain-to-source on-rResistance *

VGS =2.75V, ID <200 mA, TA =-40 to

+85

5.6

VGS =5.0 V, ID = 200 mA

3.5

Forward transconductance *

gfs

VDS =25V, ID = 200 mA, f = 1.0 kHz

100

mmhos

Input capacitance

Ciss

Output capacitance

Coss

Transfer capacitance

Crss

3.5

Turn-on delay time

td(on)

Turn-off delay time

td(off)

*Pulse Width

300 ìs, Duty Cycle

2%.

VDS =25V, VGS = 0,f= 1 MHz

VDD =30V, ID =0.2 A

IDSS

rDS(on)

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KSS138

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