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BA779 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BA779 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() BA779.BA779S Vishay Telefunken Rev. 3, 01-Apr-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85532 Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 125 °C Storage temperature range Tstg –55...+125 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient on PC board 50mmx50mmx1.6mm RthJA 500 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=20mA VF 1 V Reverse current VR=30 V IR 50 nA Diode capacitance f=100MHz, VR=0 CD 0.5 pF Differential forward re- sistance f=100MHz, IF=1.5mA rf 50 W Reverse impedance f=100MHz, VR=0 BA779 zr 5 k W R BA779S zr 9 k W Minority carrier lifetime IF=10mA, IR=10mA t 4 ms |
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