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BU911 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BU911
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU911 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU911
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
APPLICATIONS
·Solenoid/ relay drivers
·Motor control
·Electronic automotive ignition
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
450
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
6
A
ICM
Collector Current-peak
10
A
IB
B
Base Current
1
A
PC
Collector Power Dissipation
@TC=25℃
60
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.08
℃/W
isc Website：www.iscsemi.cn


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