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2SA1205 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1205 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1205 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -50 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.12A -0.5 V ICBO Collector cut-off current VCB=-70V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-0.5V 40 fT Transition frequency IE=3A ; VCE=-12V 20 MHz Switching times ton Turn-on time 0.60 μs tstg Storage time 0.50 μs tf Fall time IC=-5A;RL=4Ω IB1=-IB2=-0.12A VCC=-20V 0.25 μs 2 |
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