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BUV11 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BUV11
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV11 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L= 25mH
200
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
B
0.6
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 12A ;IB= 1.5A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 12A ;IB= 1.5A
1.5
V
ICEO
Collector Cutoff Current
VCE= 160V; IB= 0
1.5
mA
ICEX
Collector Cutoff Current
VCE= 250V;VBE= -1.5V
VCE= 250V;VBE= -1.5V;TC=125℃
1.5
6.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 6A ; VCE= 2V
20
60
hFE-2
DC Current Gain
IC= 12A ; VCE= 4V
10
fT
Current-Gain—Bandwidth Product
IC= 1A;VCE= 15V, ftest= 4MHz
8
MHz
Switching Times
ton
Turn-on Time
0.8
μs
ts
Storage Time
1.8
μs
tf
Fall Time
IC= 12A ;IB1=-IB2= 1.5A;
VCC= 150V; RC= 12.5Ω
0.4
μs
isc Website：www.iscsemi.cn



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