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BFR520 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BFR520 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 7 page ![]() INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 6V; IE= 0 0.05 μA hFE DC Current Gain IC= 20mA ; VCE= 6V 60 250 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V; f= 1GHz 9 GHz COB Output Capacitance IE= 0 ; VCB= 6V; f= 1MHz 0.5 pF PG Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 15 dB PG Power Gain IC= 20mA ; VCE= 6V; f= 2GHz 9 dB ︱S21e︱ 2 Insertion Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 13 14 dB NF Noise Figure IC= 5mA ; VCE= 6V; f= 900MHz 1.1 1.6 dB NF Noise Figure IC= 20mA ; VCE= 6V; f= 900MHz 1.6 2.1 dB isc Website:www.iscsemi.cn 2 |
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