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BUX37 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX37 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BUX37 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; IB= 0; L= 1.5mH B 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA B 1.5 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 150mA 2.0 V V BE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 150mA 2.7 V ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.25 mA hFE DC Current Gain IC= 15A; VCE= 5V 20 isc Website:www.iscsemi.cn |
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