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BD941 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD941 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD933 45 BD935 60 BD937 80 BD939 100 VCEO(SUS) Collector-Emitter Sustaining Voltage BD941 IC= 100mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 0.6 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 2V 1.3 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ 0.05 1 mA ICEO Collector Cutoff Current VCE= VCEOmax; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 150mA ; VCE= 2V 40 250 hFE-2 DC Current Gain IC= 1A ; VCE= 2V 25 fT Current-Gain—Bandwidth Product IC= 250mA ; VCE= 10V 3 MHz Switching Times ton Turn-On Time 0.4 1.0 μs toff Turn-Off Time IC= 1.0A; IB1= -IB2= 0.1A 1.5 3.0 μs isc Website:www.iscsemi.cn 2 |
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