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BD941F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BD941F
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD941F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD933F/935F/937F/939F/941F
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 150mA
·Complement to Type BD934F/936F/938F/940F/942F
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD933F
45
BD935F
60
BD937F
100
BD939F
120
VCBO
Collector-Base Voltage
BD941F
140
V
BD933F
45
BD935F
60
BD937F
80
BD939F
100
VCEO
Collector-Emitter Voltage
BD941F
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
7
A
IB
B
Base Current-Continuous
0.5
A
PC
Collector Power Dissipation
@ TC=25℃
19
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
4.17
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
55
℃/W
isc Website：www.iscsemi.cn


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