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BU505DF Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BU505DF
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU505DF Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU505DF Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU505DF Datasheet HTML 2Page - Inchange Semiconductor Company Limited BU505DF Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU505DF
DESCRIPTION
・With TO-220Fa package
・High voltage,high speed
・With integrated efficiency diode
APPLICATIONS
・For horizontal deflection circuits of color
TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
2.5
A
ICM
Collector current (peak)
4
A
IB
Base current
2
A
IBM
Base current(peak)
4
A
Ptot
Total power dissipation
TC=25℃
20
W
Tj
Max.operating junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
Thermal resistance from junction to ambient
55
K/W


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