BDT82 datasheet(1/2 Pages) ISC

No. de pieza	BDT82

Descripción Electrónicos	isc Silicon PNP Power Transistors

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BDT82/84/86/88

DESCRIPTION

·DC Current Gain -hFE = 40(Min)@ IC= -5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84;

-100V(Min)- BDT86; -120V(Min)- BDT88

·Complement to Type BDT81/83/85/87

APPLICATIONS

·Designed for use in audio output stages and general amplifer

and switching applications

ABSOLUTE MAXIMUM RATINGS(T =25℃

a

)

SYMBOL

PARAMETER

VALUE

UNIT

BDT82

-60

BDT84

-80

BDT86

-100

VCBO

Collector-Base Voltage

BDT88

-120

V

BDT82

-60

BDT84

-80

BDT86

-100

VCEO

Collector-Emitter Voltage

BDT88

-120

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-15

A

ICM

Collector Current-Peak

-20

A

IB

B

Base Current

-4

A

PC

Collector Power Dissipation

TC=25℃

125

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

70

℃/W

isc Website：www.iscsemi.cn

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