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BUX66 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX66 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX66/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUX66 -150 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX66A IC= -200mA ; IB=0 -250 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.15A B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.15A B -1.4 V BUX66 VCB= -150V; IE= 0 -1.0 ICBO Collector Cutoff Current BUX66A VCB= -250V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -6V; IC=0 -0.5 mA hFE DC Current Gain IC= -1A ; VCE= -5V 10 150 fT Current Gain-Bandwidth Product IC= -0.5A ; VCE= -10V 30 MHz isc Website:www.iscsemi.cn 2 |
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