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2SA633 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA633 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA633 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -30 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2 A B -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 μA ICEO Collector cut-off current VCE=-12V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 80 250 fT Transition frequency IC=-0.1A ; VCE=-5V 60 MHz 2 |
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