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BD201F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BD201F
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD201F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD201F/203F
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min)- BD201F
60V(Min)- BD203F
·Complement to Type BD202F/204F
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD201F
60
VCBO
Collector-Base Voltage
BD203F
60
V
BD201F
45
VCEO
Collector-Emitter Voltage
BD203F
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
IB
B
Base Current
3
A
PC
Collector Power Dissipation
@ TC=25℃
32
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
6.3
℃/W
isc Website：www.iscsemi.cn


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