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BUF405AXI Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BUF405AXI
Descripción Electrónicos  isc Silicon NPN Power Transistor BUF405AXI
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUF405AXI Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUF405AXI Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUF405AXI Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUF405AXI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L= 25mH
450
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
0.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
B
0.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
0.9
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
B
1.1
V
ICER
Collector Cutoff Current
VCE= VCEV; RBE= 5Ω
VCE= VCEV; RBE= 5Ω;TC=100℃
0.1
0.5
mA
ICEV
Collector Cutoff Current
VCE= VCEV; VBE= -1.5V
VCE= VCEV; VBE= -1.5V;TC=100℃
0.1
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
Switching Times
ts
Storage Time
0.8
μs
tf
Fall Time
IC= 2.5A;IB1= 0.25A;VCC= 50V;
VBB= -5V, RBB= 2.4Ω;L= 1mH
Vclamp= 400V
0.05
μs
isc Website：www.iscsemi.cn



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