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2SA1746 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1746 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1746 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -50 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -80mA B -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -80mA B -1.2 V ICBO Collector Cutoff Current VCB= -70V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -5A ; VCE= -1V 50 COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 400 pF fT Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 25 MHz Switching Times ton Turn-on Time 0.5 μs tstg Storage Time 0.6 μs tf Fall Time IC= -5A , RL= 4Ω, IB1= -IB2= -80mA,VCC= -20V 0.3 μs 2 |
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