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2SA1757 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SA1757
Descripción Electrónicos  Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1757 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA1757 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA1757 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1757
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -1mA ; IB= 0
-60
V
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -3A ; IB= -0.3A; L= 1mH
-60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -50μA ; IC= 0
-5
V
V(BR)CBO
Collector-Base Breakdown Voltage
IE= -50μA ; IC= 0
-100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.15A
B
-0.3
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -4A; IB= -0.2A
B
-0.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= -3A; IB= -0.15A
B
-1.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= -4A; IB= -0.2A
B
-1.5
V
ICBO
Collector Cutoff Current
VCB= -100V ; IE=0
-10
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-10
μA
hFE
DC Current Gain
IC= -1A ; VCE= -2V
160
320
fT
Current-Gain—Bandwidth Product
IE= 0.5A;VCE= -10V; ftest= 30MHz
80
MHz
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
130
pF
Switching times
ton
Turn-on Time
0.3
μs
μs
tstg
Storage Time
1.5
tf
Fall Time
RL= 10Ω, VCC= -30V
IC= -3A; IB1= -IB2= -0.15A
0.3
μs
2



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