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2SD692 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD692
Descripción Electrónicos  isc Silicon NPN Darlingtion Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD692 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
2SD692
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 1000 (Min) @ IC =1 Adc
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
6
A
IB
B
Base Current -Continuous
3
A
PC
Collector Power Dissipation@TC=25℃
50
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
isc Website：www.iscsemi.cn


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