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STM4880 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STM4880
Descripción Electrónicos  N-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM4880 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±10
uA
VGS(th)
1.0
V
13
gFS
15
S
VSD
CISS
655
pF
COSS
176
pF
CRSS
107
pF
Qg
13
nC
15
nC
Qgs
15
nC
Qgd
29
tD(ON)
10.3
ns
tr
1.5
ns
tD(OFF)
2.8
ns
tf
ns
Gate-Drain Charge
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=15V
ID=9.6A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=15V,ID=9.6A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=9.6A
VDS=10V , ID=9.6A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=7.8A
19
m ohm
c
f=1.0MHz
c
VDS=15V,ID=9.6A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
0.78
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,RG=25
Ω,VDD=20V.(See Figure13)
_
_
STM4880
Ver 1.0
www.samhop.com.tw
Jun,26,2008
2
nC
VDS=15V,ID=9.6A,VGS=4.5V
5.3
_
1.8
17
26
IS
Maximum Continuous Drain-Source Diode Forward Current
1.7
A



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