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2N5429 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2N5429
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5429 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Power Transistor
2N5429
DESCRIPTION
·Contunuous Collector Current-IC= 7A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 7A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching and wide-band amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
4.37
℃/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation@TC=25℃
40
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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