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2N6316 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2N6316
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6316 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  2N6316 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6316 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6316 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6315 2N6316
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Complement to type 2N6317/6318
APPLICATIONS
·Designed for general-purpose power
amplifier and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N6315
60
VCBO
Collector-base voltage
2N6316
Open emitter
80
V
2N6315
60
VCEO
Collector-emitter voltage
2N6316
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
7
A
ICM
Collector current-peak
15
A
IB
Base current
2
A
PD
Total Power Dissipation
TC=25℃
90
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.94
℃/W
Fig.1 simplified outline (TO-66) and symbol


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