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2SC1722 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1722 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1722 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 300 V V(BR)CBO Collector-base breakdown voltage IC=100μA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100μA ; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA 1.0 2.0 V VBE Base-emitter on voltage IC=50m A ; VCE=10V 0.68 0.9 V ICBO Collector cut-off current VCB=250V ;IE=0 0.1 μA ICEO Collector cut-off current VCE=250V; RBE=∞ 2 μA hFE DC current gain IC=50m A ; VCE=10V 50 300 fT Transition frequency IC=30m A ; VCE=20V 80 MHz COB Output capacitance IE=0 ; VCB=50V; f=1MHz 4.3 pF |
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