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2SC2809 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2809 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2809 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V V(BR)CBO Emitter-base breakdown voltage IC=1mA ;IE=0 300 V VCE(sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBE(sat) Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=300V IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=0.3A ; VCE=4V 50 fT Transition frequency IC=0.3A ; VCE=12V 20 MHz |
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