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2SC3229 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3229 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3229 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=10mA; IB=1m A 1.0 V V(BR)CEO Collector-emitter breakdown voltage IC=100μA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 7 V hFE-1 DC current gain IC=0.5mA ; VCE=10V 20 hFE-2 DC current gain IC=20mA ; VCE=10V 30 200 ICBO Collector cut-off current VCB=240V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA COB Output capacitance IE=0; VCB=20V;f=1MHz 4.0 pF fT Transition frequency IE=20mA ; VCB=20V 75 MHz |
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