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2SD555 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD555 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD555 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=2A 5.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=5V 40 200 COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 300 pF fT Transition frequency IC=1A ; VCE=10V 15 MHz 2 |
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