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2SD612K Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD612K
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  4 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD612K Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD612K Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD612K Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SD612K Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SD612K Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD612 2SD612K
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SD612
25
V(BR)CEO
Collector-emitter
breakdown voltage
2SD612K
IC=1mA; RBE=∞
35
V
2SD612
25
V(BR)CBO
Collector-base
breakdown voltage
2SD612K
IC=10μA ;IE=0
35
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=1.5A ;IB=0.15A
0.3
0.8
V
VBEsat
Base-emitter saturation voltage
IC=1.5A ;IB=0.15A
1.1
1.5
V
ICBO
Collector cut-off current
VCB=20V; IE=0
1
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1
μA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
60
320
hFE-2
DC current gain
IC=1.5A ; VCE=2V
30
fT
Transition frequency
IC=50mA ; VCE=10V
100
MHz
COB
Collector output capacitance
f=1MHz ; VCB=10V
30
pF
Switching times
ton
Turn-on time
0.05
μs
tf
Fall time
0.10
μs
tstg
Storage time
IC=500mA ; VCE=12V
IB1=-IB2=50mA
0.40
μs
hFE-1 Classifications
D
E
F
60-120
100-200
160-320
2



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