BD646 datasheet(1/2 Pages) ISC

No. de pieza	BD646

Descripción Electrónicos	isc Silicon PNP Darlington Power Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BD646

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -60V(Min)

·High DC Current Gain

: hFE= 750(Min) @IC= -3A

·Low Saturation Voltage

·Complement to Type BD645

APPLICATIONS

·Designed for use as complementary AF push-pull output

stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

ICP

Collector Current-Peak

-12

A

IB

B

Base Current-Continuous

-0.3

A

Collector Power Dissipation

@ Ta=25℃

2

PC

Collector Power Dissipation

@ TC=25℃

62.5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

62.5

℃/W

isc Website：www.iscsemi.cn

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BD646 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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