2SA673 datasheet(1/2 Pages) SECOS

No. de pieza	2SA673

Descripción Electrónicos	PNP Silicon Plastic-Encapsulate Transistor

PDF	2 Pages

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Fabricante Electrónico	SECOS [SeCoS Halbleitertechnologie GmbH]

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Elektronische Bauelemente

2SA673/673A

PNP Silicon

Plastic-Encapsulate Transistor

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

* RoHS Compliant Product

* A suffix of "-C" specifies halogen-free

* Low Frequency Amplifier

* Complementary Pair with 2SC1213

and 2SC1213A

M

FEATURES

01-Jun-2002 Rev. A

Page 1 of

2

2.54±0.1

(1.27 Typ.)

13

2

1: Emitter

2: Base

3: Collector

1.25±0.2

4.55±0.2

3.5±0.2

0.46±0.1

0.43+0.08

–0.07

TO-92

AXIMUM RATINGS (TA=25 C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

* Pulse test.

CLASSIFICATION OF hFE(1)

Rank

B

D

o

10

100-

C

o

V

C

o

C

o

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

2SA673

2SA673A

-35

-50

V

VCEO

Collector-Emitter Voltage

2SA673

2SA673A

-35

-50

V

VEBO

Emitter-Base Voltage

-4

IC

Collector Current -Continuous

-500

mA

PC

Collector Power dissipation

400

mW

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55-150

Collector-base breakdown voltage

V(BR)CBO

IC=-10µA,IE=0

2SA673

2SA673A

-35

-50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

2SA673

2SA673A

-35

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10µA,IC=0

-4

V

Collector cut-off current

ICBO

VCB= -20 V, IE=0

-0.5

µA

DC current gain

hFE(1)

*

VCE=-3V, IC= -10mA

60

320

hFE(2)

VCE=-3V, IC=-500mA

Collector-emitter saturation voltage

VCEsat

*

IC= -150mA, IB=-15mA

-0.6

V

Base-emitter voltage

VBE

VCE=-3V, IC=-10mA

-0.64

V

Range

60-120

200

160-320

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2SA673 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

2SA673 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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