2SC2411 datasheet(1/2 Pages) SECOS

No. de pieza	2SC2411

Descripción Electrónicos	NPN Transistor Plastic-Encapsulate Transi stors

PDF	2 Pages

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Fabricante Electrónico	SECOS [SeCoS Halbleitertechnologie GmbH]

Página de inicio	http://www.secosgmbh.com

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1 / 2 page

Any changing of specification will not be informed individual

2SC2411

NPN Transistor

Plastic-Encapsulate Transistors

P

n

RoHS Compliant Product

ower Dissipation

PCM: 200 mW ( Tamb= 25 C)

o

FEATURES

Collector

MAXIMUM RATINGS* TA=25

unless otherwise noted

℃

Symbol

Parameter

Value

Units

Base

Emitter

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

http://www.SeCoSGmbH.com

Elektronische Bauelemente

1

2

3

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

32

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

500

mA

PC

Collector Dissipation

200

mW

TJ, Tstg

Junction and Storage Temperature

-55-150

℃

01-Jun-2002 Rev. A

Page 1 of 2

ELECTRICAL

CHARACTERISTICS (Tamb=25℃

unless

otherwise

specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

100µA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

1mA,IB=0

32

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA,IC=0

5

V

Collector cut-off current

ICBO

VCB=20V,IE=0

1

µA

Emitter cut-off current

IEBO

VEB=4V,IC=0

1

µA

DC current gain

hFE

VCE=3V,IC=100mA

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=50mA

0.4

V

Transition frequency

fT

VCE=5V,IC=20mA,f=100MHz

250

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

6.0

pF

CLASSIFICATION OF

hFE

Rank

P

Q

R

Range

82-180

120-270

180-390

Marking

CP

CQ

CR

A suffix of "-C" specifies halogen & lead-free

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