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Dated : 10/08/2002
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
RLS244
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching
General Purpose Rectification Applications
Features
• Glass sealed envelope. (MSD)
• VRM = 250V guaranteed.
• High reliability.
Absolute Maximum Ratings (Ta = 25
oC)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
250
V
DC reverse voltage
VR
220
V
Peak forward current
IFM
625
mA
Mean rectifying current
IO
200
mA
Surge current(1s)
Isurge
1000
mA
Power dissipation
Ptot
300
mW
Junction temperature
Tj
175
OC
Storage temperature
TS
-65 to +175
OC
Characteristics at Ta = 25
oC
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
at IF = 200mA
VF
-
-
1.5
V
Reverse current
at VR = 220V
IR
-
-
10
uA
Capacitance between terminals
at f = 1MHz
CT
-
-
3
pF
Reverse recovery time
at IF = 20mA, IR = 20mA, RL = 50Ω
trr
-
-
75
ns