EPA030C datasheet(1/2 Pages) EXCELICS

No. de pieza	EPA030C

Descripción Electrónicos	High Efficiency Heterojunction Power FET

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Fabricante Electrónico	EXCELICS [Excelics Semiconductor, Inc.]

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EPA030C/EPA030CV

UPDATED 10/24/2006

High Efficiency Heterojunction Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 2

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

Revised October 2006

FEATURES

•

+23dBm TYPICAL OUTPUT POWER

•

11dB TYPICAL POWER GAIN FOR EPA030C

AND 12.0dB FOR EPA030CV AT 18GHz

•

0.3 X 300 MICRON RECESSED “MUSHROOM” GATE

•

Si3N4 PASSIVATION AND PLATED HEAT SINK

•

ADVANCED EPITAXIAL DOPING PROFILE PROVIDES

HIGH POWER EFFICIENCY AND RELIABILITY

•

EPA030CV WITH VIA HOLE SOURCE GROUNDING

•

Idss SORTED IN 10mA PER BIN RANGE

Chip Thickness: 75

± 13 microns (EPA030C)

Chip Thickness: 85

± 15 microns (EPA030CV)

:

Via Hole

No Via Hole For EPA030C

ALL DIMENSIONS IN MICRONS

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Caution! ESD sensitive device

.

EPA030C

EPA030CV

UNIT

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

21.0

23.0

21.0

23.0

P1dB

Output Power at 1dB Compression

f = 12GHz

VDS = 8V, IDS ≈ 50% IDSS

f = 18GHz

23.0

dBm

12.0

13.5

12.5

14.0

G1dB

Gain at 1dB Compression

f = 12GHz

VDS = 8V, IDS ≈ 50% IDSS

f = 18GHz

11.0

12.0

dB

PAE

Power Added Efficiency at 1dB Compression

VDS = 8V, IDS ≈ 50% IDSS

f = 12GHz

45

46

%

IDSS

Saturated Drain Current

VDS = 3V, VGS = 0V

50

90

130

50

90

130

mA

GM

Transconductance

VDS = 3V, VGS = 0V

60

95

60

95

mS

VP

Pinch-off Voltage

VDS = 3 V, IDS = 1.0 mA

-1.0

-2.5

-1.0

-2.5

V

BVGD

Drain Breakdown Voltage

IGD = 1.0mA

-13

-15

-13

-15

V

BVGS

Source Breakdown Voltage

IGS = 1.0mA

-7

-14

-7

-14

V

Rth

Thermal Resistance(Au-Sn Eutectic Attach)

125

95

oC/W

MAXIMUM RATINGS AT 25

OC

EPA030C

EPA030CV

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

ABSOLUTE

1

CONTINUOUS

2

VDS

Drain-Source Voltage

10V

8V

10V

8V

VGS

Gate-Source Voltage

-5V

-3V

-5V

-3V

Igf

Forward Gate Current

1.4mA

0.5mA

1.4mA

0.5mA

Igr

Reverse Gate Current

-0.2mA

-0.1mA

-0.2mA

-0.1mA

Input Power

20dBm

@ 3dB Compression

20dBm

@ 3dB Compression

Tch

Channel Temperature

175

oC

175

oC

175

oC

175

oC

Tstg

Storage Temperature

-65/175

oC

-65/175

oC

-65/175

oC

-65/175

oC

Pt

Total Power Dissipation

1.1W

1.5W

Note:

1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

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