Excelics

EPA025A

DATA SHEET

High Efficiency Heterojunction Power FET

•

+22.5dBm TYPICAL OUTPUT POWER

•

11.0dB TYPICAL POWER GAIN AT 18 GHz

•

TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED

GAIN AT 12GHz

•

0.3 X 250 MICRON RECESSED “MUSHROOM” GATE

•

•

ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY, AND HIGH RELIABILITY

•

Idss SORTED IN 5 mA PER BIN RANGE

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

f=18GHz

21.0

22.5

22.5

dBm

Gain at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

f=18GHz

12.0

13.5

11.0

dB

PAE

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

47

%

NF

Noise Figure

f=12GHz

Vds=2V, Ids=15mA

0.85

dB

Ga

Associated Gain

f=12GHz

Vds=2V, Ids=15mA

11.0

dB

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

40

75

105

mA

Gm

Transconductance

Vds=3V, Vgs=0V

50

80

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=1.0mA

-1.0

-2.5

V

BVgd

Drain Breakdown Voltage Igd=1.0mA

-11

-15

V

BVgs

Source Breakdown Voltage Igs=1.0mA

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

155

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

Vgs

Gate-Source Voltage

-8V

-3V

Ids

Drain Current

Idss

90mA

Igsf

Forward Gate Current

12mA

2mA

Pin

Input Power

19dBm

@3dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

880mW

730mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

Chip Thickness: 75

± 13 microns

All Dimensions In Microns





















''

*

*

6

6