1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications,

circuit protection, and voltage clamping. Extremely low forward voltage reduces

conduction loss. Miniature surface mount package is excellent for hand held and

portable applications where space is limited.

Rating

Symbol

Value

Unit

Reverse Voltage

VR

40

Volts

Forward Power Dissipation

@ TA = 25°C

Derate above 25

°C

PF

225

1.8

mW

mW/

°C

Operating Junction and Storage Temperature Range

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

BAS40LT1 = B1

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(IR = 10 µA)

V(BR)R

40

—

Volts

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

CT

—

5.0

pF

Reverse Leakage

(VR = 25 V)

IR

—

1.0

µAdc

Forward Voltage

(IF = 0.1 mAdc)

VF

—

380

mVdc

Forward Voltage

(IF = 30 mAdc)

VF

—

500

mVdc

Forward Voltage

(IF = 100 mAdc)

VF

—

1.0

Vdc

Preferred devices are Motorola recommended choices for future use and best overall value.

Thermal Clad is a registered trademark of the Bergquist Company.

Order this document

by BAS40LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BAS40LT1

Motorola Preferred Device

CASE 318 – 08, STYLE 8

SOT– 23 (TO – 236AB)

1

2

3

40 VOLTS

SCHOTTKY BARRIER DIODES

3

CATHODE

1

ANODE

REV 1