CHINA

SEMICONDUCTOR

Spec. No.

CORPORATION

Rev.

Absolute Maximum Rating -

(Ta=25 )

Symbol

Unit

mW

mA

Peak Current Per Dice(duty cycle 1/10,1KHz)

mA

-

mA/

V

Topr

Tstg

Note:Solder temperature 1/16 inch below seating plane for 3 seconds at 260

Electro-optical Characteristics -

Symbol

Min.

Typ.

Max.

Unit

-

1.8

2.5

V

Iv

1.5

4

-

mcd

P

-

660

-

nm

-

20

-

nm

-

-

100

A

IV-m

-

-

2:1

.

Page

3/6

Parameter

-40 ~ +105

0.42

Forward Voltage Per Segment

Luminous Intensity Per Segment

Spectrum Radiation Bandwidth

Reverse Current

Peak Emission Wavelength

A

(Ta=25 )

Condition

Storage Temp.

Model No CSS-S20122/S20123S

Parameter

Power Dissipation Per Dice

Continuous Forward Current Per Dice

Reverse Voltage Per Dice

30

120

Derating Linear From 25

Per Dice

Operating Temp.

IF=20mA

PS-DS-S20122/S20123S

5

Rating

-40 ~ +105

75

IF=20mA

IF=20mA

IF=10mA

Luminous Intensity Matching Ratio

IF=10mA

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