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STA2065 Datasheet(PDF) 14 Page - STMicroelectronics |
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STA2065 Datasheet(HTML) 14 Page - STMicroelectronics |
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14 / 20 page ![]() System features introduction STA2065 14/20 Doc ID16050 Rev 1 3.3 Frequency and power range The core voltage range is 1.25 ±4 %V while the IO voltage ranges are 1.8 ±10 %V, 2.5 ± 10 %V and 3.3 ± 10 %V. Table 2 shows some power use cases of STA2065 in NORMAL mode: The background of Table 2 is the maximization of data throughput on the DRAM interface, matching the currently available DRAM speed grades: 133 MHz, 166 MHz and 200 MHz (LP DDR) and 333 MHz (DDR2). Despite this, it is possible to program the ARM core, the internal bus and the DDR to run at different speeds than the ones mentioned in Table 2 The ARM bus clock and the bus clock are derived from the same common source (VCO of the PLL1) but are asynchronous each other. The DDR frequency can be the same (synchronous) or derived with a different prescaling (1,2,3,4,5,6,8,9 or 10) from the VCO of PLL1 or PLL2 (asynchronous configuration). STA2065 embeds a complete GPS subsystem where both gate logic and dedicated DSP work together. There are specific constraints in this subsystem in terms of minimum frequency in order to guarantee the target GPS specifications. In the lowest power consumption state as possible, only Vdd_on is powered and the target current drawn is 20 μA. In this state, the clock is not running and the current leakage is mainly due to the Backup memory. The 20 μA current limit has to be considered with Process best (leakage worst case condition), Vdd_on 1.3V (1.25V plus 4% tolerance) and Junction Temperature 50oC (considering, while in this state, the ambient temperature is equal to the junction temperature). Table 2. Frequency and power use cases Vdd and Vdd_on (V) Core Freq [MHz] Bus Freq [MHz] DDR Freq [MHz] Sync/Async [S/A] 1.2 5(±4%) 624 208 312 A, DDR2 1.2 5(±4%) 624 156 156 S 1.2 5(±4%) 624 124.8 124.8 S 1.2 5(±4%) 533 177.67 177.67 S 1.2 5(±4%) 533 133.25 133.25 S 1.2 5(±4%) 533 177.67 312 A, DDR2 1.2 5(±4%) 520 208 130 A 1.2 5(±4%) 520 173.34 173.34 S 1.2 5(±4%) 520 130 130 S 1.2 5(±4%) 520 208 312 A, DDR2 1.2 5(±4%) 494 197.6 197.6 S 1.2 5(±4%) 494 164.67 164.67 S 1.2 5(±4%) 494 123.5 123.5 S 1.2 5(±4%) 494 208 329.34 A, DDR2 |
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