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APTGT50TL601G Datasheet(PDF) 1 Page - Microsemi Corporation

No. de pieza APTGT50TL601G
Descripción Electrónicos  Three level inverter Trench Field Stop IGBT Power Module
PDF  7 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGT50TL601G Datasheet(HTML) 1 Page - Microsemi Corporation

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APTGT50TL601G
www.microsemi.com
1- 7
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
80
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
176
W
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C
100A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
All multiple inputs and outputs must be shorted together
5/6 ; 9/10
VCES = 600V
IC = 50A @ Tc = 80°C
Application
•
Solar converter
•
Uninterruptible Power Supplies
Features
•
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
•
Very low stray inductance
•
High level of integration
Benefits
•
Stable temperature behavior
•
Very rugged
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Easy paralleling due to positive TC of VCEsat
•
Low profile
•
RoHS Compliant
Three level inverter
Trench + Field Stop IGBT
Power Module


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