MJ13332 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJ13332

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC=100mA ; IB=0

350

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 10A; IB= 1.5A

IC= 10A; IB= 1.8A,TC=100℃

1.5

2.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 20A; IB= 5A

3.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 10A; IB= 1.5A

IC= 10A; IB= 1.8A,TC=100℃

1.8

ICEV

Collector Cutoff Current

VCEV=450V;VBE(off)=1.5V

VCEV=450V;VBE(off)=1.5V;TC=150℃

0.25

5.0

ICER

Collector Cutoff Current

VCE= 450V; RBE= 50Ω,TC= 100℃

5.0

IEBO

Emitter Cutoff Current

VEB= 6V; IC=0

0.5

hFE-1

DC Current Gain

IC= 5A ; VCE= 5V

hFE-2

DC Current Gain

IC= 10A ; VCE= 5V

Current Gain-Bandwidth Product

IC= 0.3A ;VCE= 10V; ftest=1MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=100kHz

100

400

Switching times;Resistive Load

Delay Time

0.08

0.2

μs

Rise Time

0.55

1.0

μs

Storage Time

0.7

3.5

μs

Fall Time

IC= 10A , VCC= 175V; IB1= 1.5A

VBE(off)= 5V; tp= 50μs;

Duty Cycle≤2.0%

0.11

0.7

μs

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