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STM32F103CBU6XXX Datasheet(PDF) 53 Page - STMicroelectronics

No. de pieza STM32F103CBU6XXX
Descripción Electrónicos  Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces
PDF  92 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F103CBU6XXX Datasheet(HTML) 53 Page - STMicroelectronics

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STM32F103x8, STM32F103xB
Electrical characteristics
Doc ID 13587 Rev 11
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5.3.8
PLL characteristics
The parameters given in Table 27 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 26.
Low-power mode wakeup timings
Symbol
Parameter
Typ
Unit
tWUSLEEP
(1)
1.
The wakeup times are measured from the wakeup event to the point in which the user application code
reads the first instruction.
Wakeup from Sleep mode
1.8
µs
tWUSTOP
(1)
Wakeup from Stop mode (regulator in run mode)
3.6
µs
Wakeup from Stop mode (regulator in low power
mode)
5.4
tWUSTDBY
(1)
Wakeup from Standby mode
50
µs
Table 27.
PLL characteristics
Symbol
Parameter
Value
Unit
Min(1)
1.
Based on characterization, not tested in production.
Typ
Max(1)
fPLL_IN
PLL input clock(2)
2.
Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
18.0
25
MHz
PLL input clock duty cycle
40
60
%
fPLL_OUT
PLL multiplier output clock
16
72
MHz
tLOCK
PLL lock time
200
µs
Jitter
Cycle-to-cycle jitter
300
ps
Table 28.
Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
tprog
16-bit programming time
TA–40 to +105 °C
40
52.5
70
µs
tERASE Page (1 KB) erase time
TA –40 to +105 °C
20
40
ms
tME
Mass erase time
TA –40 to +105 °C
20
40
ms



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