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STM8L101F2P6 Datasheet(PDF) 49 Page - STMicroelectronics |
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STM8L101F2P6 Datasheet(HTML) 49 Page - STMicroelectronics |
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49 / 77 page ![]() STM8L101xx Electrical parameters Doc ID 15275 Rev 7 49/77 9.3.6 I/O port pin characteristics General characteristics Subject to general operating conditions for VDD and TA unless otherwise specified. All unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or an external pull-up or pull-down resistor. Table 26. I/O static characteristics (1) Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage(2) Standard I/Os VSS-0.3 - 0.3 x VDD V True open drain I/Os VSS-0.3 - 0.3 x VDD VIH Input high level voltage (2) Standard I/Os 0.70 x VDD -VDD+0.3 V True open drain I/Os 0.70 x VDD -5.25 Vhys Schmitt trigger voltage hysteresis (3) Standard I/Os - 200 - mV True open drain I/Os - 250 - Ilkg Input leakage current (4) VSS≤VIN≤VDD Standard I/Os - - 50 (5) nA VSS≤VIN≤VDD True open drain I/Os - - 200(5) VSS≤VIN≤VDD PA0 with high sink LED driver capability - - 200(5) RPU Weak pull-up equivalent resistor(6) VIN=VSS 30 45 60 k Ω CIO (7) I/O pin capacitance - 5 - pF 1. VDD = 3.0 V, TA = -40 to 85 °C unless otherwise specified. 2. Data based on characterization results, not tested in production. 3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 4. The max. value may be exceeded if negative current is injected on adjacent pins. 5. Not tested in production. 6. RPU pull-up equivalent resistor based on a resistive transistor (corresponding IPU current characteristics described in Figure 22). 7. Data guaranteed by Design, not tested in production. |
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