MAC4DHM MAC4DLM

4

Motorola Thyristor Device Data

Figure 7. Typical Holding Current versus

Junction Temperature

Figure 8. Typical Latching Current versus

Junction Temperature

Figure 9. Exponential Static dv/dt versus

Gate–MT1 Resistance, MT2(+)

65

110

–40

TJ, JUNCTION TEMPERATURE (°C)

2.0

TJ, JUNCTION TEMPERATURE (°C)

20

110

–40

4.0

2.0

0

1000

10 K

100

RGK, GATE–MT1 RESISTANCE (OHMS)

20

15

10

5.0

0

1.0

0

–25

5.0

20

50

95

–25

5.0

8.0

10

12

4.0

3.0

5.0

80

50

65

MT2 POSITIVE

MT2 NEGATIVE

Q2

Q3

Q1

VD = 400 V

TJ = 110°C

MT2 POSITIVE

6.0

–10

35

80

–10

35

95

Q4

Figure 10. Critical Rate of Rise of

Commutating Voltage

1.0

0

di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

10

1.0

0.1

2.0

3.0

VPK = 400 V

100

°C

90

°C

TJ = 110°C

tw

VDRM

(di/dt)c =

6f ITM

1000

f =

1

2 tw

4.0

5.0

6.0

MT2 NEGATIVE