Features
1 of 4
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
FPD1050
0.75W POWER pHEMT
The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25
μmx1050μm Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The double recessed gate structure
minimizes parasitics to optimize performance. The epitaxial structure and process-
ing have been optimized for reliable high-power applications. The FPD1050 is also
available in the low-cost plastic SOT89 package.
28.5dBm Linear Output
Power at 12GHz
11dB Power Gain at 12GHz
14dB Max Stable Gain at
12GHz
41dBm OIP3
45% Power-Added Efficiency
Applications
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
Rev A0 DS080702 3.0
Package Style: Bare Die
FPD1050
0.75W Power
pHEMT
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
P1dB Gain Compression
27.5
28.5
dBm
VDS=8V, IDS=50% IDSS
S21/S12 (MSG)
14.0
dB
VDS=8V, IDS=50% IDSS
Power Gain at P1dB (G1dB)
10.0
11.0
dB
VDS=8V, IDS=50% IDSS
PAE
45
%
VDS=8V, IDS=50% IDSS, POUT=P1dB
OIP3
39
dBm
VDS=8V, IDS=50% IDSS
41
dBm
Matched for optimal power, tuned for best IP3
Saturated Drain-Source Current
(IDSS)
260
325
385
mA
VDS=1.3V, VGS=0V
Maximum Drain-Source Current
(IMAX)
520
mA
VDS=1.3V, VGS≈+1V
Transconductance (GM)
280
ms
VDS=1.3V, VGS=0V
Gate-Source Leakage Current (IGSO)
15
μAVGS=-5V
Pinch-Off Voltage (VP)
|1.0|
V
VDS=1.3V, IDS=1mA
Gate-Source Breakdown Voltage
(VBDGS)
|12.0|
|14.0|
V
IGS=3mA
Gate-Drain Breakdown Voltage
(VBDGD)
|14.5|
|16.0|
V
IGD=3mA
Thermal Resistivity (
θJC) *
45
°C/W
VDS>6V
*Note: TAMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.
Mexican ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
