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CDBF0130R Datasheet(PDF) 1 Page - Comchip Technology

No. de pieza CDBF0130R
Descripción Electrónicos  SMD Schottky Barrier Diode
PDF  4 Pages
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Fabricante Electrónico  COMCHIP [Comchip Technology]
Página de inicio  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDBF0130R Datasheet(HTML) 1 Page - Comchip Technology

  CDBF0130R Datasheet HTML 1Page - Comchip Technology CDBF0130R Datasheet HTML 2Page - Comchip Technology CDBF0130R Datasheet HTML 3Page - Comchip Technology CDBF0130R Datasheet HTML 4Page - Comchip Technology  
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Io = 100 mA
VR = 30 Volts
CDBF0130R
SMD Schottky Barrier Diode
(RoHS Device)
Page 1
QW-A1112
REV:A
SMD Diodes Specialist
Comchip Technology CO., LTD.
A
mA
V
V
1
100
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
OC
OC
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter
Conditions
Symbol Min Typ Max Unit
O
Maximum Rating (at TA=25 C unless otherwise noted)
Features
.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BQ
Mounting position: Any
Weight: 0.006 gram(approx.).
Low reverse current
0.102(2.60)
0.095(2.40)
0.020(0.50) Typ.
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
1005(2512)
0.012 (0.30) Typ.
0.040(1.00) Typ.
uA
V
0.5
0.45
IR
VF
Reverse current
Forward voltage
Parameter
Conditions
Symbol Min Typ Max Unit
VR = 10 V
IF = 10 mA
O
Electrical Characteristics (at TA=25 C unless otherwise noted)


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