LY6164 datasheet(8/13 Pages) LYONTEK

No. de pieza	LY6164

Descripción Electrónicos	Rev. 1.2 8K X 8 BIT HIGH SPEED CMOS SRAM

PDF	13 Pages

Scroll/Zoom	100%

Fabricante Electrónico	LYONTEK [Lyontek Inc.]

Página de inicio	http://www.lyontek.com.tw

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LY6164

Rev. 1.2

8K X 8 BIT HIGH SPEED CMOS SRAM

Lyontek Inc. reserves the rights to change the specifications and products without notice.

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

DATA RETENTION CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

VCC for Data Retention

VDR

CE#

≧ CC - 0.2V

or CE2 ≦ 0.2V

2.0

5.5

Data Retention Current

IDR

VCC = 2.0V

CE#

≧ CC - 0.2V or CE2 ≦ 0.2V

Others at 0.2V or VCC-0.2V

0.6

Chip Disable to Data

Retention Time

tCDR

See Data Retention

Waveforms (below)

Recovery Time

tRC*

tRC* = Read Cycle Time

DATA RETENTION WAVEFORM

Low Vcc Data Retention Waveform (1) (CE# controlled)

Vcc

CE#

VDR ≧ 2.0V

CE#

≧

cc-0.2V

Vcc(min.)

VIH

tCDR

VIH

Vcc(min.)

Low Vcc Data Retention Waveform (2) (CE2 controlled)

Vcc

CE2

VDR ≧ 2.0V

CE2 ≦ 0.2V

Vcc(min.)

VIL

tCDR

VIL

Vcc(min.)

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