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ACE7401 Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE7401 Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page  ACE7401 Technology P-Channel Enhancement Mode MOSFET VER 1.2 1 Description The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • -30V/-2.8A, R DS(ON)=115mΩ@VGS=-10V • -30V/-2.5A, R DS(ON)=125mΩ@VGS=-4.5V • -30V/-1.5A, R DS(ON)=170mΩ@VGS=-2.5V • -30V/-1.0A, R DS(ON)=240mΩ@VGS=-1.8V • Super high density cell design for extremely low R DS(ON) • Exceptional on-resistance and maximum DC current capability Application • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V TA=25℃ -2.8 Continuous Drain Current (TJ=150℃) TA=70℃ ID -2.1 A Pulsed Drain Current IDM -8 A Continuous Source Current (Diode Conduction) IS -1.4 A TA=25℃ 0.33 Power Dissipation TA=70℃ PD 0.21 W Operating Junction Temperature TJ -55/150 OC Storage Temperature Range TSTG -55/150 OC Thermal Resistance-Junction to Ambient RθJA 105 OC/W |
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