CHA2069

Ref. :DSCHA20699273 - 8-Sep-99

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

18-31GHz Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The circuit is a three-stage self biased

wide band monolithic low noise amplifier.

The circuit is manufactured with a standard

HEMT process : 0.25µm gate length, via

holes through the substrate, air bridges

and electron beam gate lithography.

It is supplied in chip form.

Main Features

Broad band performance 18-31GHz

2.5dB noise figure

22dB gain,

± 1dB gain flatness

Low DC power consumption, 55mA

20dBm 3rd order intercept point

Chip size : 2,170 x 1,270x 0.1mm

0

2

4

6

8

10

12

14

16

18

20

22

24

14

16

18

20

22

24

26

28

30

32

34

Frequency ( GHz )

On wafer typical measurements.

Main Characteristics

Tamb = +25°C

Symbol

Parameter

Min

Typ

Max

Unit

NF

Noise figure,18-31GHz

2.5

3.5

dB

G

Gain

18

22

dB

∆G

Gain flatness

± 1

± 1.5

dB

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !