CHA2092b

Ref. : DSCHA20921233 21-August-01

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

18-32GHz Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2092 is a high gain broadband three-

stage monolithic

low noise

amplifier. It is

designed for a wide range of applications, from

military

to

commercial

communication

systems. The backside of the chip is both RF

and DC ground. This helps simplify the assembly

process. Self biasing technique is implemented

on chip to ease the circuit biasing.

The circuit is manufactured with a P-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

■ Broadband performances : 18-32GHz

■ 2.5dB Noise Figure

■ 10dBm output power ( -1dB gain comp. )

■ 22dB ±1.0dB gain

■ Low DC power consumption, 60mA @ 3.5V

■ Chip size :

1.67 X 0.97 X 0.10 mm

Vgs1

Vgs2,3

Vds

IN

OUT

8831

0

5

10

15

20

25

30

15 17 19 21 23 25 27 29 31 33 35

Frequency (GHz)

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

18

32

GHz

G

Small signal gain

17

22

dB

NF

Noise figure (20-32GHz)

2.5

3.5

dB

P1dB

Output power at 1dB gain compression

8

10

dBm

Id

Bias current

60

100

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !